Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

Controllable p–n Switching Behaviors of GaAs Nanowires via an Interface Effect

(2012) Ning Han et al.   ACS Nano

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations

(2012) T. Björkman et al.   PHYSICAL REVIEW LETTERS

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

Optical Identification of Single- and Few-Layer MoS2 Sheets

(2012) Hai Li et al.   Small

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

(2011) Zhiyuan Zeng et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical transport properties of graphene on SiO2 with specific surface structures

(2011) K. Nagashio et al.   JOURNAL OF APPLIED PHYSICS

A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Functionalization of Single-Layer MoS2 Honeycomb Structures

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Variational pseudo-self-interaction-corrected density functional approach to theab initiodescription of correlated solids and molecules

(2011) A. Filippetti et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Semiconducting Electronic Property of Graphene Adsorbed on (0001) Surfaces ofSiO2

(2011) Thanh Cuong Nguyen et al.   PHYSICAL REVIEW LETTERS

Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2substrates

(2010) P Joshi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Electron doping and magnetic moment formation in N- and C-doped MgO

(2009) A. Droghetti et al.   APPLIED PHYSICS LETTERS

Comment on “Theoretical Description of Carrier Mediated Magnetism in Cobalt Doped ZnO”

(2009) Stefano Sanvito et al.   PHYSICAL REVIEW LETTERS

First-principles studies of water adsorption on graphene: The role of the substrate

(2008) Tim O. Wehling et al.   APPLIED PHYSICS LETTERS

Predictingd0magnetism: Self-interaction correction scheme

(2008) A. Droghetti et al.   PHYSICAL REVIEW B

Impurity-ion pair induced high-temperature ferromagnetism in Co-doped ZnO

(2008) C. D. Pemmaraju et al.   PHYSICAL REVIEW B

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

(2008) Xinran Wang et al.   PHYSICAL REVIEW LETTERS