Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications

(2011) Kingsuk Maitra et al.   IEEE ELECTRON DEVICE LETTERS

Mobility Enhancement in Strained $n$ -FinFETs: Basic Insight and Stress Engineering

(2010) Nicola Serra et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs

(2010) Paolo Toniutti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Hole transport in DGSOI devices: Orientation and silicon thickness effects

(2010) L. Donetti et al.   SOLID-STATE ELECTRONICS

A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

(2009) D. Fleury et al.   IEEE ELECTRON DEVICE LETTERS

Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

(2009) Toshifumi Irisawa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulation Study of Coulomb Mobility in Strained Silicon

(2009) Francesco Driussi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

(2008) S. Suthram et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs

(2008) O. Weber et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES