Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Title
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Authors
Keywords
-
Journal
SCIENCE
Volume 335, Issue 6071, Pages 947-950
Publisher
American Association for the Advancement of Science (AAAS)
Online
2012-02-03
DOI
10.1126/science.1218461

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