Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Authors
Keywords
-
Journal
SCIENCE
Volume 335, Issue 6071, Pages 947-950
Publisher
American Association for the Advancement of Science (AAAS)
Online
2012-02-03
DOI
10.1126/science.1218461
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Transport in graphene nanostructures
- (2012) Christoph Stampfer et al. Frontiers of Physics
- Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films
- (2011) Menno Bokdam et al. NANO LETTERS
- Quasiparticle Band Gap Engineering of Graphene and Graphone on Hexagonal Boron Nitride Substrate
- (2011) Neerav Kharche et al. NANO LETTERS
- High-Frequency Graphene Voltage Amplifier
- (2011) Shu-Jen Han et al. NANO LETTERS
- Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
- (2011) Alexander S. Mayorov et al. NANO LETTERS
- High-frequency, scaled graphene transistors on diamond-like carbon
- (2011) Yanqing Wu et al. NATURE
- Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride
- (2011) Jiamin Xue et al. NATURE MATERIALS
- Tunable metal–insulator transition in double-layer graphene heterostructures
- (2011) L. A. Ponomarenko et al. Nature Physics
- Adhesion and electronic structure of graphene on hexagonal boron nitride substrates
- (2011) B. Sachs et al. PHYSICAL REVIEW B
- Vertical field-effect transistor based on wave-function extension
- (2011) A. Sciambi et al. PHYSICAL REVIEW B
- Stability of boron nitride bilayers: Ground-state energies, interlayer distances, and tight-binding description
- (2011) R. M. Ribeiro et al. PHYSICAL REVIEW B
- Wafer-Scale Graphene Integrated Circuit
- (2011) Y.-M. Lin et al. SCIENCE
- Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
- (2011) Roman V. Gorbachev et al. Small
- High-speed graphene transistors with a self-aligned nanowire gate
- (2010) Lei Liao et al. NATURE
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- Density of States and Zero Landau Level Probed through Capacitance of Graphene
- (2010) L. A. Ponomarenko et al. PHYSICAL REVIEW LETTERS
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Graphene: Status and Prospects
- (2009) A. K. Geim SCIENCE
- Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
- (2009) D. C. Elias et al. SCIENCE
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started