High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
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Title
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 4, Pages 042104
Publisher
AIP Publishing
Online
2013-01-30
DOI
10.1063/1.4789365
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Related references
Note: Only part of the references are listed.- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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- Electronic transport in two-dimensional graphene
- (2011) S. Das Sarma et al. REVIEWS OF MODERN PHYSICS
- Emerging Photoluminescence in Monolayer MoS2
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- (2010) Wenzhong Bao et al. Nano Research
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- Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering
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