Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Logic Compatible High-Performance Ferroelectric Transistor Memory

(2022) Sourav Dutta et al.   IEEE ELECTRON DEVICE LETTERS

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

(2022) Tarek Ali et al.   Advanced Electronic Materials

The fundamentals and applications of ferroelectric HfO2

(2022) Uwe Schroeder et al.   Nature Reviews Materials

Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation

(2022) Jack Strand et al.   JOURNAL OF APPLIED PHYSICS

Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

(2022) Kasidit Toprasertpong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thickness-dependent ferroelectric properties of HfO2/ZrO2 nanolaminates using atomic layer deposition

(2021) Yonghong Chen et al.   Journal of Materials Science

Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis

(2021) Mehmet Alper Sahiner et al.   APPLIED PHYSICS LETTERS

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

(2021) Evelyn T. Breyer et al.   APPLIED PHYSICS LETTERS

Investigation of Gate-Length Scaling of Ferroelectric FET

(2021) Sourabh Jindal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric field effect transistors: Progress and perspective

(2021) Jae Young Kim et al.   APL Materials

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

(2021) Chirag Garg et al.   IEEE ELECTRON DEVICE LETTERS

Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor

(2021) Jinhong Min et al.   IEEE ELECTRON DEVICE LETTERS

Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

(2021) Hao-Kai Peng et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

(2021) Jae Hur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

(2021) Chen Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric field-effect transistors based on HfO2: a review

(2021) Halid Mulaosmanovic et al.   NANOTECHNOLOGY

Domains and domain dynamics in fluorite-structured ferroelectrics

(2021) Dong Hyun Lee et al.   Applied Physics Reviews

Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

(2021) Yen-Pu Chen et al.   IEEE ELECTRON DEVICE LETTERS

Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach

(2021) Bikram Kishore Mahajan et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Multigate Ferroelectric Transistor Design Toward 3-nm Technology Node

(2021) Gihun Choe et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Compact Model of Polycrystalline Ferroelectric Capacitor

(2021) Chien-Ting Tung et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective

(2021) Nicolò Zagni et al.   JOURNAL OF MATERIALS RESEARCH

On the Reliability of FeFET On-Chip Memory

(2021) Paul R. Genssler et al.   IEEE TRANSACTIONS ON COMPUTERS

Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode

(2021) Dao Wang et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution

(2020) You-Sheng Liu et al.   IEEE ELECTRON DEVICE LETTERS

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

(2020) Yi-Hsuan Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

(2020) Kasidit Toprasertpong et al.   APPLIED PHYSICS LETTERS

Built-in bias fields for retention stabilization in hafnia-based ferroelectric tunnel junctions

(2020) Benjamin Max et al.   ELECTRONICS LETTERS

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability

(2020) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

(2020) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study

(2020) Atanu K. Saha et al.   Scientific Reports

A memory window expression to evaluate the endurance of ferroelectric FETs

(2020) Nicolò Zagni et al.   APPLIED PHYSICS LETTERS

Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs

(2020) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching

(2020) Shan Deng et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

(2020) Xiaolei Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

(2020) K.-Y. Hsiang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2 films

(2020) Vineetha Mukundan et al.   APPLIED PHYSICS LETTERS

Polarization switching in thin doped HfO2 ferroelectric layers

(2020) Monica Materano et al.   APPLIED PHYSICS LETTERS

Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior

(2020) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

(2020) Yiming Qu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective

(2020) Ju Yong Park et al.   JOURNAL OF APPLIED PHYSICS

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

(2019) K.-T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

A critical review of recent progress on negative capacitance field-effect transistors

(2019) Muhammad A. Alam et al.   APPLIED PHYSICS LETTERS

Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices

(2019) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Oscillators Utilizing Ferroelectric-Based Transistors and Their Coupled Dynamics

(2019) Niharika Thakuria et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

(2019) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

(2019) Wenwu Xiao et al.   Nanoscale Research Letters

Depolarization of multidomain ferroelectric materials

(2019) Dong Zhao et al.   Nature Communications

Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

(2019) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

(2019) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

(2019) Cristobal Alessandri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

(2019) M. Lederer et al.   APPLIED PHYSICS LETTERS

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

(2019) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

(2019) Jesus A. del Alamo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review

(2019) Muhammad Ashraful Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

(2018) N. Gong et al.   APPLIED PHYSICS LETTERS

Impact of Process Variations on Negative Capacitance FinFET Devices and Circuits

(2018) Tapas Dutta et al.   IEEE ELECTRON DEVICE LETTERS

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

(2018) Ava J. Tan et al.   IEEE ELECTRON DEVICE LETTERS

Random Number Generation Based on Ferroelectric Switching

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

(2018) Milan Pesic et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

Dispersion in ferroelectric switching performance of polycrystalline Hf0.5Zr0.5O2 thin films

(2018) Seung Dam Hyun et al.   ACS Applied Materials & Interfaces

Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

(2018) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

(2018) Kai Ni et al.   IEEE ELECTRON DEVICE LETTERS

Switching dynamics of ferroelectric Zr-doped HfO2

(2018) Cristobal Alessandri et al.   IEEE ELECTRON DEVICE LETTERS

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

(2018) Ming-Yen Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Oscillators and Their Coupled Networks

(2017) Zheng Wang et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

(2017) Milan Pešić et al.   Journal of Computational Electronics

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description

(2016) Girish Pahwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

(2016) Jon F. Ihlefeld et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric

(2014) Chun Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Observation and Control of Hot Atom Damage in Ferroelectric Devices

(2014) Muhammad Masuduzzaman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

(2014) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Polarization relaxation kinetics in ultrathin ferroelectric capacitors

(2013) A. Stamm et al.   APPLIED PHYSICS LETTERS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

The origin and consequences of push-pull breakdown in series connected dielectrics

(2012) Muhammad Masuduzzaman et al.   APPLIED PHYSICS LETTERS

The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics

(2012) Muhammad Masuduzzaman et al.   APPLIED PHYSICS LETTERS

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Retention mechanism study of the ferroelectric field effect transistor

(2011) Xiao Pan et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Modeling and Design of Ferroelectric MOSFETs

(2011) Han-Ping Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization retention on short, intermediate, and long time scales in ferroelectric thin films

(2009) X. J. Lou   JOURNAL OF APPLIED PHYSICS

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS