标题
Polarization switching in thin doped HfO2 ferroelectric layers
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 117, Issue 26, Pages 262904
出版商
AIP Publishing
发表日期
2020-12-29
DOI
10.1063/5.0035100
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
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