Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

出版年份 2019 全文链接

标题

作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 40, Issue 3, Pages 399-402

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2019-02-01

DOI

10.1109/led.2019.2896231

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