Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

标题

作者

关键词

出版物

Volume 63, Issue 9, Pages 3501-3507

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2016-07-23

DOI

10.1109/ted.2016.2588439

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