A memory window expression to evaluate the endurance of ferroelectric FETs

Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices

(2019) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors

(2019) N. Zagni et al.   APPLIED PHYSICS LETTERS

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the stabilization of ferroelectric negative capacitance in nanoscale devices

(2018) Michael Hoffmann et al.   Nanoscale

Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

(2018) Ming-Yen Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

(2014) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits

(2013) Ivan S. Esqueda et al.   SOLID-STATE ELECTRONICS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Modeling and Design of Ferroelectric MOSFETs

(2011) Han-Ping Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS