Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices

标题
Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 5, Pages 710-713
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-03-29
DOI
10.1109/led.2019.2908084

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