Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

标题
Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 7, Pages 1092-1095
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-05-08
DOI
10.1109/led.2019.2914700

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