A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 39, Issue 1, Pages 15-18

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-11-23

DOI

10.1109/led.2017.2776263

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