Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 39, Issue 10, Pages 1508-1511

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-09-04

DOI

10.1109/led.2018.2868275

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