Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

标题
Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 9, Pages 1123-1126
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-07-21
DOI
10.1109/led.2016.2593627

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