High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

出版年份 2018 全文链接

标题

作者

关键词

出版物

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 65, Issue 9, Pages 3769-3774

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-08-01

DOI

10.1109/ted.2018.2856818

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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Protocol

Reagent

Reprint

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