Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

出版年份 2014 全文链接

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作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 35, Issue 1, Pages 138-140

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-01-04

DOI

10.1109/led.2013.2290117

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IEEE ELECTRON DEVICE LETTERS

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