标题
Ferroelectric field effect transistors: Progress and perspective
作者
关键词
-
出版物
APL Materials
Volume 9, Issue 2, Pages 021102
出版商
AIP Publishing
发表日期
2021-02-03
DOI
10.1063/5.0035515
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Ferroelectric properties of the flexible Pb(Zr0.52Ti0.48)O3 thin film on mica
- (2020) Hongyan Qi et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Ferroelectric polymers for non‐volatile memory devices: a review
- (2020) Huilin Li et al. POLYMER INTERNATIONAL
- Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
- (2020) Mattia Halter et al. ACS Applied Materials & Interfaces
- Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium
- (2020) C. Zacharaki et al. APPLIED PHYSICS LETTERS
- Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review
- (2020) Huie Zhu et al. POLYMER INTERNATIONAL
- Purely in-plane ferroelectricity in monolayer SnS at room temperature
- (2020) Naoki Higashitarumizu et al. Nature Communications
- A flexible artificial intrinsic-synaptic tactile sensory organ
- (2020) Yu Rim Lee et al. Nature Communications
- A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide
- (2020) Li Chen et al. Advanced Electronic Materials
- In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device
- (2020) Ki Chang Kwon et al. ACS Nano
- Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3
- (2020) Justin R. Rodriguez et al. APPLIED PHYSICS LETTERS
- A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation
- (2020) T. Ali et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Integration of perovskite Pb[Zr0.35Ti0.65]O3/HfO2 ferroelectric-dielectric composite film on Si substrate
- (2020) Prashant Singh et al. MICROELECTRONICS INTERNATIONAL
- Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
- (2020) Siqing Zhang et al. Nanoscale Research Letters
- Analysis and Modeling of Polarization Gradient Effect on Negative Capacitance FET
- (2020) Ming-Yen Kao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thin‐Film Transistors: Recent Progress in Inkjet‐Printed Thin‐Film Transistors (Adv. Sci. 6/2019)
- (2019) Seungjun Chung et al. Advanced Science
- Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers
- (2019) Wenwu Xiao et al. IEEE ELECTRON DEVICE LETTERS
- Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
- (2019) Shuoguo Yuan et al. Nature Communications
- Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
- (2019) Meng-Fu Tsai et al. ACS Applied Materials & Interfaces
- Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements
- (2019) Wenwu Xiao et al. Nanoscale Research Letters
- Freestanding crystalline oxide perovskites down to the monolayer limit
- (2019) Dianxiang Ji et al. NATURE
- Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT-Gated Black Phosphorus Transistor
- (2019) Liu Xie et al. Advanced Electronic Materials
- Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
- (2019) Kuen-Yi Chen et al. IEEE ELECTRON DEVICE LETTERS
- Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption
- (2019) Chuanlai Ren et al. ADVANCED FUNCTIONAL MATERIALS
- The rise of 2D dielectrics/ferroelectrics
- (2019) Minoru Osada et al. APL Materials
- Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer
- (2019) Sun Kak Hwang et al. ORGANIC ELECTRONICS
- Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
- (2018) Anna G. Chernikova et al. ACS Applied Materials & Interfaces
- Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
- (2018) Halid Mulaosmanovic et al. ACS Applied Materials & Interfaces
- Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
- (2018) Si Joon Kim et al. APPLIED PHYSICS LETTERS
- Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
- (2018) Kai Ni et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
- (2018) Robin Materlik et al. JOURNAL OF APPLIED PHYSICS
- Design of DRAM-NAND flash hybrid main memory and Q-learning-based prefetching method
- (2018) Su-Kyung Yoon et al. JOURNAL OF SUPERCOMPUTING
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
- (2018) Thomas Mikolajick et al. MRS BULLETIN
- Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets
- (2018) Huie Zhu et al. RSC Advances
- Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
- (2018) Mingsheng Long et al. ADVANCED FUNCTIONAL MATERIALS
- Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors
- (2018) Binjian Zeng et al. IEEE ELECTRON DEVICE LETTERS
- Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays
- (2018) Kai Ni et al. IEEE ELECTRON DEVICE LETTERS
- Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
- (2018) Si Joon Kim et al. JOM
- Electrical properties of Pb[Zr0.35Ti0.65]O3 on PEALD Al2O3 for NVM applications
- (2018) Prashant Singh et al. MICROELECTRONICS INTERNATIONAL
- A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
- (2018) Yingfen Wei et al. NATURE MATERIALS
- Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
- (2018) Jiuren Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
- (2017) Korok Chatterjee et al. IEEE ELECTRON DEVICE LETTERS
- Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates
- (2017) Takahisa Shiraishi et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes
- (2017) Yu Zhou et al. NANO LETTERS
- Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
- (2017) Wenjun Ding et al. Nature Communications
- PVDF-Based Ferroelectric Polymers in Modern Flexible Electronics
- (2017) Xin Chen et al. Advanced Electronic Materials
- Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors
- (2017) Alexey Lipatov et al. Advanced Electronic Materials
- Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
- (2016) Anna Chernikova et al. ACS Applied Materials & Interfaces
- Induction of ferroelectricity in nanoscale ZrO 2 /HfO 2 bilayer thin films on Pt/Ti/SiO 2 /Si substrates
- (2016) Y.W. Lu et al. ACTA MATERIALIA
- Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
- (2016) Michael Hoffmann et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory
- (2016) Changhyun Ko et al. ADVANCED MATERIALS
- Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties
- (2016) Sergei Zarubin et al. APPLIED PHYSICS LETTERS
- Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films
- (2016) Takahisa Shiraishi et al. APPLIED PHYSICS LETTERS
- Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
- (2016) Nanbo Gong et al. IEEE ELECTRON DEVICE LETTERS
- Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
- (2016) Ekaterina Yurchuk et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides
- (2016) Ruixiang Fei et al. PHYSICAL REVIEW LETTERS
- Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
- (2016) Fucai Liu et al. Nature Communications
- A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
- (2016) S. Riedel et al. AIP Advances
- Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics
- (2015) Xudong Wang et al. ADVANCED MATERIALS
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
- (2015) Min Hyuk Park et al. ADVANCED MATERIALS
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
- (2015) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- PZT to Lead Free Piezo Ceramics: A Review
- (2015) P. K. Panda et al. FERROELECTRICS
- Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics
- (2015) M. H. Lee et al. IEEE ELECTRON DEVICE LETTERS
- High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode
- (2015) Young Tack Lee et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors
- (2015) Ngoc Huynh Van et al. Nanoscale
- Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
- (2015) J. Muller et al. ECS Journal of Solid State Science and Technology
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
- (2014) Han Joon Kim et al. APPLIED PHYSICS LETTERS
- Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
- (2014) Ngoc Huynh Van et al. NANOTECHNOLOGY
- Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory
- (2014) Dhinesh Babu Velusamy et al. ORGANIC ELECTRONICS
- Investigation of electrical properties of individual GaN nanowire-based ferroelectric field effect transistor
- (2014) Y. Q. Chen et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- A million spiking-neuron integrated circuit with a scalable communication network and interface
- (2014) P. A. Merolla et al. SCIENCE
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Phase transition and huge ferroelectric polarization observed in BiFe1−xGaxO3 thin films
- (2013) Jingdan Yan et al. APPLIED PHYSICS LETTERS
- Dynamic Observation of Brain-Like Learning in a Ferroelectric Synapse Device
- (2013) Yu Nishitani et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electrical characterization of MFeOS gate stacks for ferroelectric FETs
- (2013) Atul Kumar et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Understanding crystallization features of P(VDF-TrFE) copolymers under confinement to optimize ferroelectricity in nanostructures
- (2013) Mari-Cruz García-Gutiérrez et al. Nanoscale
- Flexible graphene–PZT ferroelectric nonvolatile memory
- (2013) Wonho Lee et al. NANOTECHNOLOGY
- Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films
- (2013) Mengyuan Li et al. NATURE MATERIALS
- Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks
- (2012) Y. Nishitani et al. JOURNAL OF APPLIED PHYSICS
- Electronic Band Structure of Exfoliated Titanium- and/or Niobium-Based Oxide Nanosheets Probed by Electrochemical and Photoelectrochemical Measurements
- (2012) Kosho Akatsuka et al. Journal of Physical Chemistry C
- Facile Preparation of Highly Oriented Poly(vinylidene fluoride) Langmuir–Blodgett Nanofilms Assisted by Amphiphilic Polymer Nanosheets
- (2012) Huie Zhu et al. MACROMOLECULES
- MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
- (2012) Hee Sung Lee et al. Small
- Ferroelectric memory based on nanostructures
- (2012) Xingqiang Liu et al. Nanoscale Research Letters
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity
- (2011) G. Rachmuth et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Spike timing dependent plasticity: a consequence of more fundamental learning rules
- (2010) Harel Shouval Frontiers in Computational Neuroscience
- From Vinylidene Fluoride (VDF) to the Applications of VDF-Containing Polymers and Copolymers: Recent Developments and Future Trends†
- (2009) Bruno Ameduri CHEMICAL REVIEWS
- Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory
- (2009) Jiyoun Chang et al. ORGANIC ELECTRONICS
- High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
- (2009) X. Hong et al. PHYSICAL REVIEW LETTERS
- The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles
- (2008) Dominik Fischer et al. APPLIED PHYSICS LETTERS
- THE EFFECT OF REDUCED GATE LEAKAGE ON IMPROVED RETENTION TIME OF METAL-FERROELECTRIC (PbZr0.53Ti0.47O3)-INSULATOR (ZrO2)-SEMICONDUCTOR CAPACITORS
- (2008) Wen-chieh Shih et al. INTEGRATED FERROELECTRICS
- A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate
- (2008) Hiroyuki Tanaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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