Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors
出版年份 2019 全文链接
标题
Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf
0.5
Zr
0.5
O
2
Capacitors
作者
关键词
-
出版物
Advanced Materials Interfaces
Volume -, Issue -, Pages 1901180
出版商
Wiley
发表日期
2019-09-06
DOI
10.1002/admi.201901180
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
- (2019) Maxim G. Kozodaev et al. JOURNAL OF APPLIED PHYSICS
- Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
- (2018) Anna G. Chernikova et al. ACS Applied Materials & Interfaces
- Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
- (2018) Uwe Schroeder et al. INORGANIC CHEMISTRY
- On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
- (2018) F. P. G. Fengler et al. JOURNAL OF APPLIED PHYSICS
- Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2
- (2018) Everett D. Grimley et al. Advanced Materials Interfaces
- Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
- (2018) Damir R. Islamov et al. ACTA MATERIALIA
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants
- (2017) M. H. Park et al. Journal of Materials Chemistry C
- Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2
- (2016) Milan Pešić et al. ADVANCED FUNCTIONAL MATERIALS
- Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
- (2016) Milan Pešić et al. ADVANCED FUNCTIONAL MATERIALS
- Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
- (2015) Tony Schenk et al. ACS Applied Materials & Interfaces
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
- (2015) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
- (2015) J. Muller et al. ECS Journal of Solid State Science and Technology
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide
- (2014) Uwe Schroeder et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications
- (2012) Stefan Mueller et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in yttrium-doped hafnium oxide
- (2011) J. Müller et al. JOURNAL OF APPLIED PHYSICS
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