The fundamentals and applications of ferroelectric HfO2

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

(2021) Xianghan Xu et al.   NATURE MATERIALS

Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

(2021) Mitsue Takahashi et al.   Nanomaterials

Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

(2021) T. Francois et al.   APPLIED PHYSICS LETTERS

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

(2021) Evelyn T. Breyer et al.   APPLIED PHYSICS LETTERS

Next generation ferroelectric materials for semiconductor process integration and their applications

(2021) T. Mikolajick et al.   JOURNAL OF APPLIED PHYSICS

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN) n /(ScN) m Superlattice

(2021) Kun Hee Ye et al.   Physica Status Solidi-Rapid Research Letters

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

(2021) Terence Mittmann et al.   Physica Status Solidi-Rapid Research Letters

Large thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films

(2021) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

New Low‐Energy Crystal Structures in ZrO 2 and HfO 2

(2021) Alfred Kersch et al.   Physica Status Solidi-Rapid Research Letters

An Overview of Ferroelectric Hafnia and Epitaxial Growth

(2021) Jing Cao et al.   Physica Status Solidi-Rapid Research Letters

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

(2021) Pavan Nukala et al.   SCIENCE

Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

(2021) Kyoungjun Lee et al.   Scientific Reports

Enhanced Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films Using a HfO 0.61 N 0.72 Interfacial Layer

(2021) Beom Yong Kim et al.   Advanced Electronic Materials

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film

(2021) Zhaomeng Gao et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films

(2021) Kevin Ferri et al.   JOURNAL OF APPLIED PHYSICS

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

(2021) Duk-Hyun Choe et al.   Materials Today

Wake-up Free Ferroelectric Rhombohedral Phase in Epitaxially Strained ZrO2 Thin Films

(2021) José P. B. Silva et al.   ACS Applied Materials & Interfaces

One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon

(2021) Suraj S. Cheema et al.   Advanced Electronic Materials

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

(2020) Saul Estandía et al.   CRYSTAL GROWTH & DESIGN

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

(2020) Weitong Ding et al.   ACTA MATERIALIA

What’s next for negative capacitance electronics?

(2020) Michael Hoffmann et al.   Nature Electronics

Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

(2020) Seungyeol Oh et al.   APPLIED PHYSICS LETTERS

Polarization switching in thin doped HfO2 ferroelectric layers

(2020) Monica Materano et al.   APPLIED PHYSICS LETTERS

What Will Come After V-NAND-Vertical Resistive Switching Memory?

(2019) Kyung Jean Yoon et al.   Advanced Electronic Materials

AlScN: A III-V semiconductor based ferroelectric

(2019) Simon Fichtner et al.   JOURNAL OF APPLIED PHYSICS

Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film

(2019) Takanori Mimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectrcity and Large Piezoelectric Response of AlN/ScN superlattice

(2019) Mohammad Noor-A-Alam et al.   ACS Applied Materials & Interfaces

Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contents

(2019) Yuxing Li et al.   APPLIED PHYSICS LETTERS

Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films

(2019) Shi Liu et al.   PHYSICAL REVIEW MATERIALS

Modeling of Negative Capacitance in Ferroelectric Thin Films

(2019) Hyeon Woo Park et al.   ADVANCED MATERIALS

Ferroelectricity in YO1.5-HfO2 films around 1 μm in thickness

(2019) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Origin of Pyroelectricity in Ferroelectric HfO 2

(2019) J. Liu et al.   Physical Review Applied

On the Origin of the Large Remanent Polarization in La:HfO 2

(2019) Tony Schenk et al.   Advanced Electronic Materials

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

(2019) Kyoungjun Lee et al.   ACS Applied Materials & Interfaces

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions

(2019) Milena Cervo Sulzbach et al.   Advanced Electronic Materials

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

(2018) P. Buragohain et al.   APPLIED PHYSICS LETTERS

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

(2018) Robin Materlik et al.   JOURNAL OF APPLIED PHYSICS

Review Article: Stress in thin films and coatings: Current status, challenges, and prospects

(2018) Grégory Abadias et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Dispersion in ferroelectric switching performance of polycrystalline Hf0.5Zr0.5O2 thin films

(2018) Seung Dam Hyun et al.   ACS Applied Materials & Interfaces

Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films

(2018) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films

(2018) Takanori Kiguchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains

(2017) Christopher Künneth et al.   JOURNAL OF APPLIED PHYSICS

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

(2017) Young Hwan Lee et al.   NANOTECHNOLOGY

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Stabilization of metastable phases in hafnia owing to surface energy effects

(2016) Rohit Batra et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

(2016) Kiliha Katayama et al.   JOURNAL OF APPLIED PHYSICS

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Energy Landscape of Zirconia Phase Transitions

(2015) Shu-Hui Guan et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

(2015) Michael Hoffmann et al.   Nano Energy

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films

(2015) Min Hyuk Park et al.   Nano Energy

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

(2014) Min Hyuk Park et al.   Advanced Energy Materials

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

(2012) T. Olsen et al.   APPLIED PHYSICS LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Laser-diode-heated floating zone (LDFZ) method appropriate to crystal growth of incongruently melting materials

(2012) Toshimitsu Ito et al.   JOURNAL OF CRYSTAL GROWTH

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Experimental and theoretical investigation on polarization reversal in unfatigued lead-zirconate-titanate ceramic

(2010) Sergey Zhukov et al.   JOURNAL OF APPLIED PHYSICS

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS