A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

(2020) Min‐Kyu Kim et al.   ADVANCED MATERIALS

Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films

(2020) Takanori Mimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The effects of thin film homogeneity on the performance of ferroelectric tunnel junctions

(2020) A Dörfler et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Memristor with a ferroelectric HfO2 layer: In which case it is a ferroelectric tunnel junction

(2020) Vitalii Mikheev et al.   NANOTECHNOLOGY

Hf0.5Zr0.5O2-based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

(2020) Tian Guoliang et al.   ELECTRONICS LETTERS

Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint

(2020) Min Chul Chun et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

(2020) Milena Cervo Sulzbach et al.   ADVANCED FUNCTIONAL MATERIALS

Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

(2020) Junghyeon Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

(2020) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

(2020) Aniruddh Shekhawat et al.   NANOTECHNOLOGY

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Supervised Learning in All FeFET-Based Spiking Neural Network: Opportunities and Challenges

(2020) Sourav Dutta et al.   Frontiers in Neuroscience

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric negative capacitance

(2019) Jorge Íñiguez et al.   Nature Reviews Materials

What Will Come After V-NAND-Vertical Resistive Switching Memory?

(2019) Kyung Jean Yoon et al.   Advanced Electronic Materials

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

A critical review of recent progress on negative capacitance field-effect transistors

(2019) Muhammad A. Alam et al.   APPLIED PHYSICS LETTERS

Low power, ultrafast synaptic plasticity in 1R-ferroelectric tunnel memristive structure for spiking neural networks

(2019) F. Zayer et al.   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices

(2019) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Broad Phase Transition of Fluorite‐Structured Ferroelectrics for Large Electrocaloric Effect

(2019) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties

(2019) T. Shiraishi et al.   APPLIED PHYSICS LETTERS

Ferroelectric Second-Order Memristor

(2019) Vitalii Mikheev et al.   ACS Applied Materials & Interfaces

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors

(2019) Pratyush Buragohain et al.   ACS Applied Materials & Interfaces

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fluorite-structure antiferroelectrics

(2019) Min Hyuk Park et al.   REPORTS ON PROGRESS IN PHYSICS

On the Origin of the Large Remanent Polarization in La:HfO 2

(2019) Tony Schenk et al.   Advanced Electronic Materials

Ferroelectric materials for neuromorphic computing

(2019) S. Oh et al.   APL Materials

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

(2019) Kyoungjun Lee et al.   ACS Applied Materials & Interfaces

Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory

(2019) Jungkyu Yoon et al.   APPLIED PHYSICS LETTERS

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions

(2019) Milena Cervo Sulzbach et al.   Advanced Electronic Materials

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

(2019) Hojoon Ryu et al.   Scientific Reports

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

(2019) Min Hyuk Park et al.   Applied Physics Reviews

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

(2018) P. Buragohain et al.   APPLIED PHYSICS LETTERS

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

(2018) Xuan Tian et al.   APPLIED PHYSICS LETTERS

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

Doped ZrO2 for future lead free piezoelectric devices

(2018) S. Starschich et al.   JOURNAL OF APPLIED PHYSICS

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

(2018) Robin Materlik et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

(2018) Youngin Goh et al.   NANOTECHNOLOGY

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

(2018) Youngin Goh et al.   APPLIED PHYSICS LETTERS

Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films

(2018) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

A ferroelectric field effect transistor based synaptic weight cell

(2018) Matthew Jerry et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

(2018) Lin Chen et al.   Nanoscale

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories

(2018) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor

(2018) Masaharu Kobayashi   Applied Physics Express

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

(2018) Xunzhao Yin et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

(2017) Rohit Batra et al.   Journal of Physical Chemistry C

Electron transport across ultrathin ferroelectric Hf 0.5 Zr 0.5 O 2 films on Si

(2017) A. Chouprik et al.   MICROELECTRONIC ENGINEERING

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Scale-up and optimization of HfO 2 -ZrO 2 solid solution thin films for the electrostatic supercapacitors

(2017) Keum Do Kim et al.   Nano Energy

Effect of acceptor doping on phase transitions of HfO 2 thin films for energy-related applications

(2017) Min Hyuk Park et al.   Nano Energy

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

(2016) Anna Chernikova et al.   ACS Applied Materials & Interfaces

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectric phase stabilization of HfO2by nitrogen doping

(2016) Lun Xu et al.   Applied Physics Express

Stabilization of metastable phases in hafnia owing to surface energy effects

(2016) Rohit Batra et al.   APPLIED PHYSICS LETTERS

Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

(2016) Kiliha Katayama et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays

(2016) S. Mueller et al.   FERROELECTRICS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity of nondoped thin HfO2films in TiN/HfO2/TiN stacks

(2016) Tomonori Nishimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

(2016) Jon F. Ihlefeld et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Neuromorphic Computing: Memristors for Energy-Efficient New Computing Paradigms (Adv. Electron. Mater. 9/2016)

(2016) Doo Seok Jeong et al.   Advanced Electronic Materials

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

(2015) Michael Hoffmann et al.   Nano Energy

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films

(2015) Min Hyuk Park et al.   Nano Energy

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

The effects of layering in ferroelectric Si-doped HfO2 thin films

(2014) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

(2014) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Antiferroelectricity in thin-filmZrO2from first principles

(2014) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

(2014) Min Hyuk Park et al.   Advanced Energy Materials

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

(2013) Dominik Martin et al.   SOLID-STATE ELECTRONICS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

(2011) An Quan Jiang et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors

(2011) Hyun Ju Lee et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Solid-state memories based on ferroelectric tunnel junctions

(2011) André Chanthbouala et al.   Nature Nanotechnology

Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions

(2010) Hyun Ju Lee et al.   APPLIED PHYSICS LETTERS

Experimental and theoretical investigation on polarization reversal in unfatigued lead-zirconate-titanate ceramic

(2010) Sergey Zhukov et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Control of Spin Polarization

(2010) V. Garcia et al.   SCIENCE

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

(2010) Shigeki Sakai et al.   Materials

The Inlaid Al2O3Tunnel Switch for Ultrathin Ferroelectric Films

(2009) An Quan Jiang et al.   ADVANCED MATERIALS

Perspective on the Development of Lead-free Piezoceramics

(2009) Jürgen Rödel et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

(2009) V. Garcia et al.   NATURE

Resolving the Landauer paradox in ferroelectric switching by high-field charge injection

(2009) An-Quan Jiang et al.   PHYSICAL REVIEW B

A Strain-Driven Morphotropic Phase Boundary in BiFeO3

(2009) R. J. Zeches et al.   SCIENCE

Operational method of a ferroelectric (Fe)-NAND flash memory array

(2009) Shouyu Wang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Origin of morphotropic phase boundaries in ferroelectrics

(2008) Muhtar Ahart et al.   NATURE