Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device

Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

(2017) Woo Young Choi et al.   IEEE ELECTRON DEVICE LETTERS

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

(2017) Dongku Kang et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Optimal memory configuration analysis in tri-hybrid solid-state drives with storage class memory and multi-level cell/triple-level cell NAND flash memory

(2017) Chihiro Matsui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface

(2017) Kyungjoon Baek et al.   Nanoscale

A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology

(2016)   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

(2015) Jung Ho Yoon et al.   ADVANCED MATERIALS

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

(2015) Ki-Tae Park et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

(2014) Cong Ye et al.   Applied Physics Express

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method

(2014) Hee-Dong Kim et al.   Scientific Reports

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations

(2013) Ah Rahm Lee et al.   APPLIED PHYSICS LETTERS

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

(2012) Thomas Bertaud et al.   APPLIED PHYSICS LETTERS

Phase change materials

(2012) Simone Raoux et al.   MRS BULLETIN

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

(2010) Changhyuk Lee et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS