Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory

(2015) Shengjun Qin et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

(2014) Stefano Ambrogio et al.   ADVANCED MATERIALS

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

(2014) Shaoli Lv et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

(2014) Jan van den Hurk et al.   NANOTECHNOLOGY

On the SET/RESET current asymmetry in electrochemical metallization memory cells

(2014) Stephan Menzel et al.   Physica Status Solidi-Rapid Research Letters

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

(2013) Attilio Belmonte et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory

(2013) Tong Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes

(2013) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   Nanoscale

Switching kinetics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch

(2013) T. Tsuruoka et al.   AIP Advances

Simulation of multilevel switching in electrochemical metallization memory cells

(2012) Stephan Menzel et al.   JOURNAL OF APPLIED PHYSICS

Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories

(2012) I. Valov et al.   JOURNAL OF SOLID STATE ELECTROCHEMISTRY

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

(2011) Sang-Jun Choi et al.   ADVANCED MATERIALS

One-dimensional model of the programming kinetics of conductive-bridge memory cells

(2011) John R. Jameson et al.   APPLIED PHYSICS LETTERS

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

(2011) Feng Pan et al.   IEEE ELECTRON DEVICE LETTERS

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(2010) Y. Bernard et al.   MICROELECTRONIC ENGINEERING

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

Power and Energy Perspectives of Nonvolatile Memory Technologies

(2010) Narbeh Derhacobian et al.   PROCEEDINGS OF THE IEEE

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS