Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

In situ TEM Observation of Resistance Switching in Titanate Based Device

(2014) Yang Yang et al.   Scientific Reports

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

(2013) Byung Joon Choi et al.   NANO LETTERS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

In situ imaging of the conducting filament in a silicon oxide resistive switch

(2012) Jun Yao et al.   Scientific Reports

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

(2010) M. Bosman et al.   APPLIED PHYSICS LETTERS

Unipolar recovery of dielectric breakdown in fully silicided high-κ gate stack devices and its reliability implications

(2010) N. Raghavan et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

(2009) R. Yasuhara et al.   APPLIED PHYSICS LETTERS

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS