Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

Published 2009 View Full Article

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Title
Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 12, Pages 1335-1337
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-12-01
DOI
10.1109/led.2009.2032566

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