Complementary resistive switching in tantalum oxide-based resistive memory devices

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Self-Aligned Memristor Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step

(2010) Qiangfei Xia et al.   NANO LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

(2008) Bo Soo Kang et al.   ADVANCED MATERIALS