Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Transport properties of two finite armchair graphene nanoribbons

(2013) Luis Rosales et al.   Nanoscale Research Letters

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

(2011) Qing-Qing Sun et al.   IEEE ELECTRON DEVICE LETTERS

Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory

(2011) Y. L. Song et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

(2010) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

(2010) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

(2010) M. Terai et al.   IEEE ELECTRON DEVICE LETTERS

High-speed and localized resistive switching characteristics of double-layer SrZrO3memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS