Low Variability Resistor-Memristor Circuit Masking the Actual Memristor States

Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance

(2015) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

(2013) Seul Ji Song et al.   Scientific Reports

Modeling for multilevel switching in oxide-based bipolar resistive memory

(2012) Ji-Hyun Hur et al.   NANOTECHNOLOGY

A scalable neuristor built with Mott memristors

(2012) Matthew D. Pickett et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Towards artificial neurons and synapses: a materials point of view

(2012) Doo Seok Jeong et al.   RSC Advances

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

(2010) Jung Ho Yoon et al.   APPLIED PHYSICS LETTERS

Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell

(2010) Seul Ji Song et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO[sub 2] Thin Film

(2010) Kyung Min Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

(2009) Qiangfei Xia et al.   NANO LETTERS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE