Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

(2014) Stefano Ambrogio et al.   ADVANCED MATERIALS

Retention failure analysis of metal-oxide based resistive memory

(2014) Shinhyun Choi et al.   APPLIED PHYSICS LETTERS

Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance

(2014) Stefan Tappertzhofen et al.   IEEE ELECTRON DEVICE LETTERS

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Thermoelectric Seebeck effect in oxide-based resistive switching memory

(2014) Ming Wang et al.   Nature Communications

Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories

(2014) Stefan Tappertzhofen et al.   ChemElectroChem

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

(2013) Takeki Ninomiya et al.   IEEE ELECTRON DEVICE LETTERS

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

(2013) Attilio Belmonte et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

(2013) Ilia Valov   ChemElectroChem

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

(2012) Stefan Tappertzhofen et al.   Nanoscale

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Practical Approach to Programmable Analog Circuits With Memristors

(2010) Yuriy V. Pershin et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology