Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Published 2012 View Full Article

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Title
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 12, Pages 123508
Publisher
AIP Publishing
Online
2012-03-25
DOI
10.1063/1.3697648
References
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