Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
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Title
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 1, Pages 012905
Publisher
AIP Publishing
Online
2016-01-07
DOI
10.1063/1.4939131
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- (2013) V. Iglesias et al. MICROELECTRONIC ENGINEERING
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