Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM

Published 2016 View Full Article

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Title
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
Authors
Keywords
Clustering model, Conductive AFM, HfO, 2, Read disturb, Resistive switching, Sub-quantum conductance
Journal
MICROELECTRONICS RELIABILITY
Volume 64, Issue -, Pages 172-178
Publisher
Elsevier BV
Online
2016-09-19
DOI
10.1016/j.microrel.2016.07.112

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