Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Investigation of State Stability of Low-Resistance State in Resistive Memory

(2010) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers

(2009) Shimeng Yu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application

(2009) Xiao Sun et al.   IEEE ELECTRON DEVICE LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today