Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

(2010) W.C. Chien et al.   IEEE ELECTRON DEVICE LETTERS

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

The Role of CuAlO Interface Layer for Switching Behavior of Al/ $\hbox{Cu}_{x}\hbox{O}$/Cu Memory Device

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films

(2010) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

(2010) F. Nardi et al.   SOLID-STATE ELECTRONICS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

(2008) H. B. Lv et al.   IEEE ELECTRON DEVICE LETTERS

Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films

(2008) Chih-Yang Lin et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY