Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Electronic and Optoelectronic Devices based on Two-Dimensional Materials: From Fabrication to Application

(2017) Jaewoo Shim et al.   Advanced Electronic Materials

High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

(2016) Bilu Liu et al.   ACS Nano

Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers

(2016) Young Tack Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

(2016) Yongsuk Choi et al.   ADVANCED MATERIALS

An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure

(2016) Dong-Ho Kang et al.   ADVANCED MATERIALS

Chemical Vapor Deposition Synthesis of Ultrathin Hexagonal ReSe2Flakes for Anisotropic Raman Property and Optoelectronic Application

(2016) Muhammad Hafeez et al.   ADVANCED MATERIALS

Extremely Large Gate Modulation in Vertical Graphene/WSe2Heterojunction Barristor Based on a Novel Transport Mechanism

(2016) Jaewoo Shim et al.   ADVANCED MATERIALS

High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

(2016) Jaewoo Shim et al.   ADVANCED MATERIALS

Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer

(2016) Peng-Zhi Shao et al.   APPLIED PHYSICS LETTERS

Improved contact resistance in ReSe2 thin film field-effect transistors

(2016) Chris M. Corbet et al.   APPLIED PHYSICS LETTERS

Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling

(2016) Lei Yin et al.   APPLIED PHYSICS LETTERS

Single Defect Light-Emitting Diode in a van der Waals Heterostructure

(2016) Genevieve Clark et al.   NANO LETTERS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure

(2016) Mingsheng Long et al.   NANO LETTERS

Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials

(2016) Hyun Jeong et al.   NANO LETTERS

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2

(2016) Philip M. Campbell et al.   Nanoscale

Does p-type ohmic contact exist in WSe2–metal interfaces?

(2016) Yangyang Wang et al.   Nanoscale

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

(2016) Tathagata Paul et al.   NANOTECHNOLOGY

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

(2016) Quoc An Vu et al.   Nature Communications

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

(2016) Boyi Hao et al.   Scientific Reports

Fast High-Responsivity Few-Layer MoTe2Photodetectors

(2016) Tobias J. Octon et al.   Advanced Optical Materials

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

(2016) Mojtaba Farmanbar et al.   Advanced Electronic Materials

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits

(2015) Pyo Jin Jeon et al.   ACS Applied Materials & Interfaces

Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2

(2015) Hisato Yamaguchi et al.   ACS Nano

Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates

(2015) Zai-Quan Xu et al.   ACS Nano

Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories

(2015) Alexey Lipatov et al.   ACS Nano

Engineering Optical and Electronic Properties of WS2 by Varying the Number of Layers

(2015) Hyun-Cheol Kim et al.   ACS Nano

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

(2015) Shu Nakaharai et al.   ACS Nano

Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte

(2015) Huilong Xu et al.   ACS Nano

Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices

(2015) Yuqiang Ma et al.   ACS Nano

ReS2-Based Field-Effect Transistors and Photodetectors

(2015) Enze Zhang et al.   ADVANCED FUNCTIONAL MATERIALS

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

(2015) Dong-Ho Kang et al.   ADVANCED FUNCTIONAL MATERIALS

Origin of Noise in Layered MoTe2Transistors and its Possible Use for Environmental Sensors

(2015) Yen-Fu Lin et al.   ADVANCED MATERIALS

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

(2015) Kunttal Keyshar et al.   ADVANCED MATERIALS

Full-range electrical characteristics of WS2 transistors

(2015) Jatinder Kumar et al.   APPLIED PHYSICS LETTERS

Low-frequency noise in MoSe2 field effect transistors

(2015) Suprem R. Das et al.   APPLIED PHYSICS LETTERS

Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

(2015) A. Sanne et al.   APPLIED PHYSICS LETTERS

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

(2015) Yohta Sata et al.   APPLIED PHYSICS LETTERS

van der Waals Heterojunction Devices Based on Organohalide Perovskites and Two-Dimensional Materials

(2015) Hung-Chieh Cheng et al.   NANO LETTERS

Optically Pumped Two-Dimensional MoS2 Lasers Operating at Room-Temperature

(2015) Omid Salehzadeh et al.   NANO LETTERS

Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering

(2015) Shengxue Yang et al.   NANO LETTERS

WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

(2015) F. Withers et al.   NANO LETTERS

Interlayer interactions in anisotropic atomically thin rhenium diselenide

(2015) Huan Zhao et al.   Nano Research

Sulfur vacancy activated field effect transistors based on ReS2nanosheets

(2015) Kai Xu et al.   Nanoscale

Monolayer semiconductor nanocavity lasers with ultralow thresholds

(2015) Sanfeng Wu et al.   NATURE

Light-emitting diodes by band-structure engineering in van der Waals heterostructures

(2015) F. Withers et al.   NATURE MATERIALS

Picosecond photoresponse in van der Waals heterostructures

(2015) M. Massicotte et al.   Nature Nanotechnology

Strong light–matter coupling in two-dimensional atomic crystals

(2015) Xiaoze Liu et al.   Nature Photonics

Monolayer excitonic laser

(2015) Yu Ye et al.   Nature Photonics

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

(2015) A.T. Hanbicki et al.   SOLID STATE COMMUNICATIONS

Ultrafast response of monolayer molybdenum disulfide photodetectors

(2015) Haining Wang et al.   Nature Communications

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

(2015) Erfu Liu et al.   Nature Communications

Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

(2015) Chulseung Jung et al.   Scientific Reports

Photothermoelectric and photovoltaic effects both present in MoS2

(2015) Youwei Zhang et al.   Scientific Reports

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

(2015) Dongri Qiu et al.   Scientific Reports

Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

(2015) Vyom Parashar et al.   Scientific Reports

A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

(2015) Ah-Jin Cho et al.   Nanoscale Research Letters

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

(2015) N. R. Pradhan et al.   Scientific Reports

Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

(2015) Wu Shi et al.   Scientific Reports

Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

(2014) Chris M. Corbet et al.   ACS Nano

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

(2014) Wei Sun Leong et al.   ACS Nano

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Tunable Charge-Trap Memory Based on Few-Layer MoS2

(2014) Enze Zhang et al.   ACS Nano

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

(2014) Bhim Chamlagain et al.   ACS Nano

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

(2014) Xue Liu et al.   ACS Nano

Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

(2014) Yexin Deng et al.   ACS Nano

Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition

(2014) Woanseo Park et al.   ACS Nano

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse

(2014) Seong Hun Yu et al.   ACS Nano

Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping

(2014) Sungjin Wi et al.   ACS Nano

Low-Frequency Noise in Bilayer MoS2 Transistor

(2014) Xuejun Xie et al.   ACS Nano

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

(2014) Mei Zhang et al.   ACS Nano

Tuning On–Off Current Ratio and Field-Effect Mobility in a MoS2–Graphene Heterostructure via Schottky Barrier Modulation

(2014) Chih-Jen Shih et al.   ACS Nano

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2

(2014) Xingli Wang et al.   ACS Nano

Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

(2014) Wenjing Zhang et al.   ACS Nano

Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

(2014) Yung-Huang Chang et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities

(2014) Nihar R. Pradhan et al.   ACS Nano

Light Generation and Harvesting in a van der Waals Heterostructure

(2014) Oriol Lopez-Sanchez et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor

(2014) Daniel Wolverson et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Hybrid 2D-0D MoS2-PbS Quantum Dot Photodetectors

(2014) Dominik Kufer et al.   ADVANCED MATERIALS

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

(2014) Rai Moriya et al.   APPLIED PHYSICS LETTERS

Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

(2014) J. Renteria et al.   APPLIED PHYSICS LETTERS

Analysis of flicker noise in two-dimensional multilayer MoS2 transistors

(2014) Hyuk-Jun Kwon et al.   APPLIED PHYSICS LETTERS

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry

(2014) Hsiang-Lin Liu et al.   APPLIED PHYSICS LETTERS

Mono- and Bilayer WS2 Light-Emitting Transistors

(2014) Sanghyun Jo et al.   NANO LETTERS

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

(2014) Rui Cheng et al.   NANO LETTERS

Photovoltaic and Photothermoelectric Effect in a Double-Gated WSe2 Device

(2014) Dirk J. Groenendijk et al.   NANO LETTERS

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

(2014) Marco M. Furchi et al.   NANO LETTERS

Exciton Kinetics, Quantum Efficiency, and Efficiency Droop of Monolayer MoS2 Light-Emitting Devices

(2014) O. Salehzadeh et al.   NANO LETTERS

Two-Dimensional Metal–Chalcogenide Films in Tunable Optical Microcavities

(2014) S. Schwarz et al.   NANO LETTERS

Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts

(2014) Joon Young Kwak et al.   NANO LETTERS

Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates

(2014) Xin Lu et al.   NANO LETTERS

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

(2014) Hailong Zhou et al.   NANO LETTERS

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

(2014) Shengxue Yang et al.   Nanoscale

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

(2014) Deepak Sharma et al.   NANOTECHNOLOGY

Probing excitonic dark states in single-layer tungsten disulphide

(2014) Ziliang Ye et al.   NATURE

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Atomically thin p–n junctions with van der Waals heterointerfaces

(2014) Chul-Ho Lee et al.   Nature Nanotechnology

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Solar-energy conversion and light emission in an atomic monolayer p–n diode

(2014) Andreas Pospischil et al.   Nature Nanotechnology

Valley photothermoelectric effects in transition-metal dichalcogenides

(2014) Satoru Konabe et al.   PHYSICAL REVIEW B

High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenideMoS2

(2014) Jared H. Strait et al.   PHYSICAL REVIEW B

Tightly Bound Excitons in MonolayerWSe2

(2014) Keliang He et al.   PHYSICAL REVIEW LETTERS

Electrically Switchable Chiral Light-Emitting Transistor

(2014) Y. J. Zhang et al.   SCIENCE

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

(2014) Sefaattin Tongay et al.   Nature Communications

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(2014) Jiahao Kang et al.   Physical Review X

Surface transport and band gap structure of exfoliated 2H-MoTe2crystals

(2014) Ignacio Gutiérrez Lezama et al.   2D Materials

Control of two-dimensional excitonic light emission via photonic crystal

(2014) Sanfeng Wu et al.   2D Materials

Microscopic origin of low frequency noise in MoS2 field-effect transistors

(2014) Subhamoy Ghatak et al.   APL Materials

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

(2014) Rajesh Kappera et al.   APL Materials

Metal Contacts on Physical Vapor Deposited Monolayer MoS2

(2013) Cheng Gong et al.   ACS Nano

Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

(2013) Dung-Sheng Tsai et al.   ACS Nano

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications

(2013) Jing-Kai Huang et al.   ACS Nano

Two-Dimensional Crystals: Managing Light for Optoelectronics

(2013) Goki Eda et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

(2013) André Dankert et al.   ACS Nano

Photosensor Device Based on Few-Layered WS2Films

(2013) Néstor Perea-López et al.   ADVANCED FUNCTIONAL MATERIALS

Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots

(2013) Chee Huei Lee et al.   ADVANCED MATERIALS

High-Gain Phototransistors Based on a CVD MoS2Monolayer

(2013) Wenjing Zhang et al.   ADVANCED MATERIALS

Characterization of metal contacts for two-dimensional MoS2 nanoflakes

(2013) Sumeet Walia et al.   APPLIED PHYSICS LETTERS

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

(2013) Wei Wu et al.   APPLIED PHYSICS LETTERS

Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

(2013) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

(2013) N. R. Pradhan et al.   APPLIED PHYSICS LETTERS

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

(2013) Matin Amani et al.   APPLIED PHYSICS LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Ultrafast graphene-based broadband THz detector

(2013) Martin Mittendorff et al.   APPLIED PHYSICS LETTERS

Controlling the spontaneous emission rate of monolayer MoS2 in a photonic crystal nanocavity

(2013) Xuetao Gan et al.   APPLIED PHYSICS LETTERS

Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

(2013) Jiadan Lin et al.   APPLIED PHYSICS LETTERS

Trilayered MoS$_{\bf 2}$ Metal –Semiconductor–Metal Photodetectors: Photogain and Radiation Resistance

(2013) Dung-Sheng Tsai et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Where Does the Current Flow in Two-Dimensional Layered Systems?

(2013) Saptarshi Das et al.   NANO LETTERS

Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

(2013) Y. J. Zhang et al.   NANO LETTERS

Large and Tunable Photothermoelectric Effect in Single-Layer MoS2

(2013) Michele Buscema et al.   NANO LETTERS

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

(2013) Marco Bernardi et al.   NANO LETTERS

Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors

(2013) Vinod K. Sangwan et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

(2013) Jen-Ru Chen et al.   NANO LETTERS

Electroluminescence in Single Layer MoS2

(2013) R. S. Sundaram et al.   NANO LETTERS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

(2013) H. S. Song et al.   Nanoscale

Barrier inhomogeneities at vertically stacked graphene-based heterostructures

(2013) Yen-Fu Lin et al.   Nanoscale

Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation

(2013) Junhong Na et al.   Nanoscale

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

(2013) Woo Jong Yu et al.   Nature Nanotechnology

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

(2013) Yi Zhang et al.   Nature Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

(2013) Kallol Roy et al.   Nature Nanotechnology

Chip-integrated ultrafast graphene photodetector with high responsivity

(2013) Xuetao Gan et al.   Nature Photonics

Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

(2013) Philipp Tonndorf et al.   OPTICS EXPRESS

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

(2013) L. Britnell et al.   SCIENCE

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

(2013) Min Sup Choi et al.   Nature Communications

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

(2013) Marcio Fontana et al.   Scientific Reports

High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

(2013) Mohammad R. Esmaeili-Rad et al.   Scientific Reports

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

(2012) Woong Choi et al.   ADVANCED MATERIALS

Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell

(2012) Mariyappan Shanmugam et al.   APPLIED PHYSICS LETTERS

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

(2012) Stefano Larentis et al.   APPLIED PHYSICS LETTERS

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Small-signal amplifier based on single-layer MoS2

(2012) Branimir Radisavljevic et al.   APPLIED PHYSICS LETTERS

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Mobility enhancement and highly efficient gating of monolayer MoS2transistors with polymer electrolyte

(2012) Ming-Wei Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

(2012) Daniele Braga et al.   NANO LETTERS

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

(2012) Hee Sung Lee et al.   NANO LETTERS

Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers

(2012) Humberto R. Gutiérrez et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells

(2012) Mariyappan Shanmugam et al.   Nanoscale

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Tightly bound trions in monolayer MoS2

(2012) Kin Fai Mak et al.   NATURE MATERIALS

Photonic design principles for ultrahigh-efficiency photovoltaics

(2012) Albert Polman et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

(2012) Ji Feng et al.   Nature Photonics

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

(2012) A.K.M. Newaz et al.   Nature Communications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

(2011) Kangho Lee et al.   ADVANCED MATERIALS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Photoluminescence from Chemically Exfoliated MoS2

(2011) Goki Eda et al.   NANO LETTERS

Embracing the quantum limit in silicon computing

(2011) John J. L. Morton et al.   NATURE

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers

(2011) Yandong Ma et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Electronic transport in polycrystalline graphene

(2010) Oleg V. Yazyev et al.   NATURE MATERIALS

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

It's Time to Reinvent the Transistor!

(2010) T. N. Theis et al.   SCIENCE

Dielectric Screening Enhanced Performance in Graphene FET

(2009) Fang Chen et al.   NANO LETTERS

Photo-Thermoelectric Effect at a Graphene Interface Junction

(2009) Xiaodong Xu et al.   NANO LETTERS

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

(2009) Wenjuan Zhu et al.   PHYSICAL REVIEW B

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Limit to two-dimensional mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 million

(2008) E. H. Hwang et al.   PHYSICAL REVIEW B

Scattering mechanisms and Boltzmann transport in graphene

(2007) Shaffique Adam et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES