4.8 Article

Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

Journal

ADVANCED MATERIALS
Volume 27, Issue 42, Pages 6612-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502677

Keywords

-

Funding

  1. Taiwan Ministry of Science and Technology [MOST 103-2112-M-005-001-MY2]
  2. Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) [25107004]
  3. Council for Science and Technology Policy (CSTP) of Japan
  4. Experiment-Theory Fusion trial project by MANA
  5. Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN

Ask authors/readers for more resources

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type a-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transitionmetal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available