Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices
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Title
Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices
Authors
Keywords
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Journal
NANOTECHNOLOGY
Volume 25, Issue 15, Pages 155702
Publisher
IOP Publishing
Online
2014-03-19
DOI
10.1088/0957-4484/25/15/155702
References
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Related references
Note: Only part of the references are listed.- Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
- (2013) Matin Amani et al. APPLIED PHYSICS LETTERS
- Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy
- (2013) Deepak Sharma et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
- (2013) Vinod K. Sangwan et al. NANO LETTERS
- Chemical Vapor Sensing with Monolayer MoS2
- (2013) F. K. Perkins et al. NANO LETTERS
- Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
- (2013) Sina Najmaei et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Low-frequency 1/f noise in graphene devices
- (2013) Alexander A. Balandin Nature Nanotechnology
- Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
- (2013) Marcio Fontana et al. Scientific Reports
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- Control of valley polarization in monolayer MoS2 by optical helicity
- (2012) Kin Fai Mak et al. Nature Nanotechnology
- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors
- (2011) Yan Zhang et al. ACS Nano
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Stretching and Breaking of Ultrathin MoS2
- (2011) Simone Bertolazzi et al. ACS Nano
- High-frequency, scaled graphene transistors on diamond-like carbon
- (2011) Yanqing Wu et al. NATURE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Flicker Noise in Bilayer Graphene Transistors
- (2009) Qinghui Shao et al. IEEE ELECTRON DEVICE LETTERS
- Enhancement of Photocatalytic H2Evolution on CdS by Loading MoS2as Cocatalyst under Visible Light Irradiation
- (2008) Xu Zong et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Impact of bias condition on 1/f noise of dual-gate depletion type MOSFET in linear region and consequences for noise diagnostic application and modelling
- (2008) M. Videnovic-Misic et al. MICROELECTRONICS RELIABILITY
- Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices
- (2008) Yu-Ming Lin et al. NANO LETTERS
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