Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

(2014) Z.H. Feng et al.   CARBON

Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

(2013) Jaehyun Yang et al.   ACS Applied Materials & Interfaces

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

(2013) Jongho Lee et al.   ACS Nano

Velocity saturation in few-layer MoS2 transistor

(2013) Gianluca Fiori et al.   APPLIED PHYSICS LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

(2013) Song-Lin Li et al.   NANO LETTERS

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

(2013) Zelei Guo et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

(2012) Han Liu et al.   APPLIED PHYSICS LETTERS

Small-signal amplifier based on single-layer MoS2

(2012) Branimir Radisavljevic et al.   APPLIED PHYSICS LETTERS

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

(2012) Nicholas Petrone et al.   NANO LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

State-of-the-Art Graphene High-Frequency Electronics

(2012) Yanqing Wu et al.   NANO LETTERS

Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

(2012) Chuan Wang et al.   NANO LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

High-frequency self-aligned graphene transistors with transferred gate stacks

(2012) R. Cheng et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Flexible and transparent all-graphene circuits for quaternary digital modulations

(2012) Seunghyun Lee et al.   Nature Communications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

BN/Graphene/BN Transistors for RF Applications

(2011) Han Wang et al.   IEEE ELECTRON DEVICE LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Wafer-Scale Graphene Integrated Circuit

(2011) Y.-M. Lin et al.   SCIENCE

Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

(2011) Hai Li et al.   Small

Parallel Array InAs Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics

(2010) Toshitake Takahashi et al.   ACS Nano

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

High-speed graphene transistors with a self-aligned nanowire gate

(2010) Lei Liao et al.   NATURE

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Materials and Mechanics for Stretchable Electronics

(2010) J. A. Rogers et al.   SCIENCE

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics

(2010) Lei Sun et al.   Small

Thin-Film Transistors

(2009) Robert A. Street   ADVANCED MATERIALS

Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz

(2009) Yu-Ming Lin et al.   IEEE ELECTRON DEVICE LETTERS

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

(2008) Dae-Hyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

(2008) Xinran Wang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY