Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Single-particle tunneling in doped graphene-insulator-graphene junctions

(2012) R. M. Feenstra et al.   JOURNAL OF APPLIED PHYSICS

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

(2012) Yumeng Shi et al.   NANO LETTERS

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

(2012) Daniele Braga et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Graphene Nanoribbon Tunnel Transistors

(2008) Qin Zhang et al.   IEEE ELECTRON DEVICE LETTERS