Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene

(2012) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Single-particle tunneling in doped graphene-insulator-graphene junctions

(2012) R. M. Feenstra et al.   JOURNAL OF APPLIED PHYSICS

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Graphene-Based Ambipolar RF Mixers

(2010) Han Wang et al.   IEEE ELECTRON DEVICE LETTERS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Adaptive Logic Circuits with Doping-Free Ambipolar Carbon Nanotube Transistors

(2009) Woo Jong Yu et al.   NANO LETTERS

Diameter dependent Raman scattering of WS2nanotubes

(2009) Matthias Krause et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

ZnO Nanowire and $\hbox{WS}_{2}$ Nanotube Electronics

(2008) Husnu Emrah Unalan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices

(2008) WanSik Hwang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES