Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications

(2013) Jing-Kai Huang et al.   ACS Nano

Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

(2013) Steven Chuang et al.   APPLIED PHYSICS LETTERS

Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

(2013) Y. J. Zhang et al.   NANO LETTERS

Large and Tunable Photothermoelectric Effect in Single-Layer MoS2

(2013) Michele Buscema et al.   NANO LETTERS

Electroluminescence in Single Layer MoS2

(2013) R. S. Sundaram et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Optical generation of excitonic valley coherence in monolayer WSe2

(2013) Aaron M. Jones et al.   Nature Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

(2013) Philipp Tonndorf et al.   OPTICS EXPRESS

Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an IsolatedMoS2Trilayer

(2013) Xiao Li et al.   PHYSICAL REVIEW LETTERS

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Robust optical emission polarization in MoS2monolayers through selective valley excitation

(2012) G. Sallen et al.   PHYSICAL REVIEW B

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS