A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

(2014) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach

(2008) K.D. Buddharaju et al.   SOLID-STATE ELECTRONICS