Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT

Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique

(2022) Gunjan Yadav et al.   JOURNAL OF MATERIALS RESEARCH

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

(2022) Abdul Naim Khan et al.   Silicon

Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique

(2022) Gunjan Yadav et al.   OPTICAL MATERIALS

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

(2022) Qingzhi Meng et al.   Micromachines

Impact ionization coefficients and critical electric field in GaN

(2021) Takuya Maeda et al.   JOURNAL OF APPLIED PHYSICS

AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure

(2021) Hsin-Ying Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT

(2021) V. Sandeep et al.   SUPERLATTICES AND MICROSTRUCTURES

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

(2021) Min Jae Yeom et al.   Micromachines

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments

(2020) Vladimir Lucian Ene et al.   Nanomaterials

Room temperature electroluminescence from Laser MBE grown Gallium nitride LEDs

(2020) Sheetal Dewan et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Fabrication and pH-Sensitivity Analysis of MOS-HEMT Dimensional Variants for Bio-Sensing Applications

(2020) Arathy Varghese et al.   IEEE TRANSACTIONS ON NANOBIOSCIENCE

Channel Engineering of Normally-Off AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric

(2018) Qianlan Hu et al.   IEEE ELECTRON DEVICE LETTERS

Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen

(2018) Yu-Shyan Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

(2018) Kuiwei Geng et al.   Electronics

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

(2017) Patrick Fiorenza et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

(2017) Kefeng Han et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

(2016) N. Manikanthababu et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range

(2016) Mohammad Soltani et al.   OPTICS EXPRESS

Dielectric response of wurtzite gallium nitride in the terahertz frequency range

(2016) M.T. Hibberd et al.   SOLID STATE COMMUNICATIONS

Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

(2015) R. Swain et al.   Journal of Computational Electronics

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

(2014) Hua Pang et al.   CHINESE PHYSICS LETTERS

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

(2013) Zhihua Dong et al.   ELECTRONICS LETTERS

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

(2013) Sreenidhi Turuvekere et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Structural, optical, vibrational, and magnetic properties of sol-gel derived Ni doped ZnO nanoparticles

(2013) Gunjan Srinet et al.   JOURNAL OF APPLIED PHYSICS

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

(2012) A.G. Khairnar et al.   SOLID STATE SCIENCES

Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

(2012) V. I. Rudakov et al.   TECHNICAL PHYSICS LETTERS

Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

(2011) M. A. Negara et al.   APPLIED PHYSICS LETTERS

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

(2011) Yue Hao et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

(2010) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

(2010) Kevin J. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

(2009) M. Alomari et al.   IEEE ELECTRON DEVICE LETTERS

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

(2009) Changwook Jeong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

(2009) S. Monaghan et al.   SOLID-STATE ELECTRONICS

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

(2008) Yue Yuan-Zheng et al.   Chinese Physics B

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-$k$ Praseodymium Oxide Layer

(2008) Hsien-Chin Chiu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoindentation Investigation of HfO[sub 2] and Al[sub 2]O[sub 3] Films Grown by Atomic Layer Deposition

(2008) K. Tapily et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY