Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

(2011) Steven J. Bentley et al.   IEEE ELECTRON DEVICE LETTERS

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

(2010) A. O’Mahony et al.   APPLIED PHYSICS LETTERS

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric

(2010) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

(2010) Han Zhao et al.   APPLIED PHYSICS LETTERS

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

(2009) Han Zhao et al.   APPLIED PHYSICS LETTERS

Extraction of the Effective Mobility of $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$MOSFETs

(2009) C.L. Hinkle et al.   IEEE ELECTRON DEVICE LETTERS

Single-photon avalanche diodes for the near-infrared range: detector and circuit issues

(2008) Alberto Tosi et al.   JOURNAL OF MODERN OPTICS