5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Published 2013 View Full Article

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Title
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing
Authors
Keywords
-
Journal
ELECTRONICS LETTERS
Volume 49, Issue 3, Pages 221-222
Publisher
Institution of Engineering and Technology (IET)
Online
2013-02-06
DOI
10.1049/el.2012.3153

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