AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Published 2008 View Full Article

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Title
AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 8, Pages 838-840
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-07-30
DOI
10.1109/led.2008.2000949

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