AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
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Title
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
Authors
Keywords
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Journal
Electronics
Volume 7, Issue 12, Pages 416
Publisher
MDPI AG
Online
2018-12-11
DOI
10.3390/electronics7120416
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- Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
- (2017) Huaxing Jiang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNxas Gate Dielectric
- (2017) Xing Lu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- GaN-on-Si Power Technology: Devices and Applications
- (2017) Kevin J. Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
- (2017) Shih-Chien Liu et al. IEEE Journal of the Electron Devices Society
- Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer
- (2016) Zhili Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
- (2016) Jae-Gil Lee et al. SOLID-STATE ELECTRONICS
- AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
- (2015) Shu Yang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
- (2015) Jie-Jie Zhu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability
- (2014) M. Capriotti et al. APPLIED PHYSICS LETTERS
- Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
- (2013) Ting-Hsiang Hung et al. APPLIED PHYSICS LETTERS
- 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
- (2013) Zhikai Tang et al. IEEE ELECTRON DEVICE LETTERS
- Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
- (2013) Chihoko Mizue et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electronic surface and dielectric interface states on GaN and AlGaN
- (2013) Brianna S. Eller et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
- (2012) Junwoo Son et al. APPLIED PHYSICS LETTERS
- Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
- (2011) Y.C. Chang et al. MICROELECTRONIC ENGINEERING
- Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
- (2011) Eiji Miyazaki et al. SOLID-STATE ELECTRONICS
- Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
- (2009) Subramaniam Arulkumaran et al. Applied Physics Express
- High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD
- (2009) Zhi Hong Liu et al. IEEE ELECTRON DEVICE LETTERS
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
- (2008) Gaudenzio Meneghesso et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
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