Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

Published 2012 View Full Article

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Title
Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system
Authors
Keywords
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Journal
TECHNICAL PHYSICS LETTERS
Volume 38, Issue 11, Pages 982-984
Publisher
Pleiades Publishing Ltd
Online
2012-12-15
DOI
10.1134/s1063785012110120
References
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