GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

Published 2017 View Full Article

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Title
GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 9, Pages 095004
Publisher
IOP Publishing
Online
2017-06-27
DOI
10.1088/1361-6641/aa7be3

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