Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen

Published 2018 View Full Article

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Title
Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 2, Pages 783-787
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-01-05
DOI
10.1109/ted.2017.2781141

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