Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-$k$ Praseodymium Oxide Layer

Published 2008 View Full Article

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Title
Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-$k$ Praseodymium Oxide Layer
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 11, Pages 3305-3309
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-11-12
DOI
10.1109/ted.2008.2004851

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